INTEGRATED CIRCUIT DEVICE

An integrated circuit device includes a substrate, first and second fin active regions formed on the substrate and extending in a first direction parallel to a top surface of the substrate, a first gate structure disposed on a side surface of the first fin active region, a pair of first impurity regions respectively formed on a top portion and a bottom portion of the first fin active region, a second gate structure disposed on a side surface of the second fin active region, and a pair of second impurity regions respectively formed on a top portion or a bottom portion of the second fin active region, wherein the pair of first impurity regions vertically overlap each other, and the pair of second impurity regions do not vertically overlap each other. 本公开提供了集成电路器件。种集成电路器件包括：基板；第鳍有源区和第二鳍有源区，形成在基板上并在平行于基板的顶表面的第方向上延伸；第栅结构，设置在第鳍有源区的侧表面上；对第杂质区，分别形成在第鳍有源区的顶部分和底部分上；第二栅结构，设置在第二鳍有源区的侧表面上；以及对第二杂质区，分别形成在第二鳍有源区的顶部分和/或底部分上，其中所述对第杂质区竖直地彼此交叠，并且所述对第二杂质区不竖直地彼此交叠。