Semiconductor Device, Dynamic Quantity Measuring Device And Method For Manufacturing Semiconductor Device

This semiconductor device is provided with: a metal body; a bonding layer arranged on the metal body; and a semiconductor chip arranged on the bonding layer. The bonding layer comprises: a first layerthat is formed between the metal body and the semiconductor chip and contains a filler; and a second...

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Bibliographische Detailangaben
Hauptverfasser:	TERADA DAISUKE, ISHIHARA SHOSAKU, ONOZUKA JUNJI, SHIBATA MIZUKI, SHIMOKAWA HANAE, SOMA ATSUO, ONUKI HIROSHI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ANGLES MEASURING AREAS MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER,MECHANICAL EFFICIENCY, OR FLUID PRESSURE MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	This semiconductor device is provided with: a metal body; a bonding layer arranged on the metal body; and a semiconductor chip arranged on the bonding layer. The bonding layer comprises: a first layerthat is formed between the metal body and the semiconductor chip and contains a filler; and a second layer that is bonded to the first layer and the semiconductor chip and has a higher thermal expansion coefficient than the first layer. 本发明的半导体器件包括金属体、配置在金属体上的接合层和配置在接合层上的半导体芯片，接合层包括在金属体与半导体芯片之间形成的包含填料的第层，和与第层和半导体芯片接合的、热膨胀率大于第层的第二层。