GaN-based p type gate HFET device and preparation method therefor

The invention discloses a GaN-based p type gate HFET device and a preparation method therefor. The device structure comprises a silicon substrate, an AlN nucleating layer, an AlGaN buffer layer, a GaNhigh-resistance layer, a GaN channel layer, an AlN space layer, an AlGaN barrier layer, a p-GaN layer, a p+-GaN/n+-InGaN tunneling layer from the bottom up in sequence; a source and a drain are formed on the AlGaN barrier layer; a gate is formed on the p+-GaN/n+-InGaN tunneling layer, and the gate is positioned between the source and the drain; and an SiN layer is grown on the AlGaN barrier layerbetween the source and gate and between the source and the drain. By virtue of growth of the p+-GaN/n+-InGaN tunneling layer, preparation of the device electrode can be realized by evaporating the same electrode material on the source, the gate and the drain electrodes in one time, the technological process of the device can be simplified, and the performance of the device can be improved. 本发明公开了种GaN基p型栅HFET器件及其制备方法，器件结构从