Semiconductor device and imaging device

The present invention improves the joint strength between semiconductor chips. In this semiconductor device, a first semiconductor chip is provided with a first joining surface having a first insulating layer, a plurality of first pads to which is electrically connected a first inner layer circuit which is insulated by the first insulating layer, and a first metal layer of wire shape arranged to the outside of the plurality of first pads. A second semiconductor chip is provided with a second joining surface for joining to the first joining surface and having a second insulating layer, a plurality of second pads to which is electrically connected a second inner layer circuit which is arranged at a location facing the first pads and is insulated by the second insulating layer, and a second metal layer of wire shape arranged at a location facing the first metal layer. The widths of the first metal layer and the second metal layer are widths based on the joint strength of the first insulating layer and the second