Bidirectional switch having back to back field effect transistors

A bi-directional semiconductor switching device includes first and second vertical field effect transistors (FETs) formed in tandem from a semiconductor substrate. A source for the first FET is on a first side of the substrate and a source for the second FET is on a second side of the substrate opposite the first side. Gates for both the first and second FETs are disposed in tandem in a common setof trenches formed a drift region of the semiconductor substrate that is sandwiched between the sources for the first and second FETs. The drift layer acts as a common drain for both the first FET and second FET. 个双向半导体开关器件包括形成在半导体衬底上的第和第二垂直场效应晶体管（FET），串联在起。第FET的源极在衬底的第边上，第二FET的源极在衬底的第二边上，第二边和第边相对。第和第二FET的栅极都位于组公共沟槽中，这组沟槽构成半导体衬底的漂流区，漂流区夹在第和第二FET的源极之间。漂流区作为第FET和第二FET的公共漏极。