Semiconductor device, manufacturing method therefor, and electronic device

The invention provides a semiconductor device, a manufacturing method therefor and an electronic device, and the semiconductor device comprises a semiconductor substrate, a main grid electrode located on the semiconductor substrate, a trench located below the main grid electrode, and a source electrode and a drain electrode which are located at two sides of the main grid electrode and the trench. n sub-grid electrodes are disposed between the source electrode and the drain electrode, and the main grid electrode and the n sub-grid electrodes are separated from each other, wherein the main grid electrode and each sub-grid electrode can achieve the applying of different voltages independently, so as to adjust a voltage on the trench, and n is an integer which is not less than one. The semiconductor device can precisely control the saturation current, and facilitates the debugging of devices. The electronic device has the similar advantages. 本发明提供种半导体器件及其制作方法、电子装置，该半导体器件包括：半导体衬底，位于所述半导体衬底上的主栅极和位于所述主栅极之下的沟道，以及位于所述