Semiconductor device, manufacturing method therefor, and electronic device

The invention provides a semiconductor device, a manufacturing method therefor and an electronic device, and relates to the technical field of semiconductors. The semiconductor substrate comprises a substrate which comprises a core region and is provided with an interlayer dielectric layer; a plurality of first bit lines which are disposed on the interlayer dielectric layer in the core region at intervals; a first dielectric layer which covers the first bit lines and the interlayer dielectric layer in the core region, wherein each part, between the adjacent first bit lines in the core region, of the first dielectric layer is provided with an air gap. According to the invention, the air gaps are disposed between the adjacent bit lines of the semiconductor devices, thereby reducing the capacitance of the bit lines, and reducing the coupling noise between the bit lines. Also, units with the uniform performances can be obtained, such as a unit with the uniform threshold voltage (Vt) and a unit with the uniform ra