SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The invention provides a semiconductor device and a manufacturing method thereof. The manufacturing method of a semiconductor device can improve the mechanical strength of a pad more than before, and suppress the occurrence of a crack. The manufacturing method of a semiconductor device includes: forming a first pad constituted by a first metal layer; forming an insulating layer on the first pad; providing an opening portion in the insulating layer by removing the insulating layer on at least a partial region of the first pad; forming a second pad constituted by a second metal layer in the opening portion of the insulating layer so as to have a film thickness that is smaller than the film thickness of the insulating layer; and forming a third pad constituted by a third metal layer on the second pad. 本发明提供半导体装置及其制造方法，该半导体装置的制造方法能够使焊盘的机械强度比以往提高而抑制裂纹的产生。该半导体装置的制造方法具有如下工序：形成由第1金属层构成的第1焊盘；在第1焊盘上形成绝缘层；通过去除第1焊盘的至少部分区域上的绝缘层，在绝缘层设置开口部；以使第2焊盘具有比绝缘层的膜厚小的膜厚的方式，在绝缘层的开口部形成由第2金属层构成的第2焊盘；以及在第2焊盘上形成由第3金属层构成的第3焊盘。