Systems and methods for in-situ wafer edge and backside plasma cleaning

The invention relates to systems and methods for in-situ wafer edge and backside plasma cleaning. Specifically, a lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A grounded second upper plate is positioned next to the first upper plate. A dielectric support provides support of a workpiece within a region between the lower electrode plate and the first upper plate. A purge gas is supplied at a central location of the first upper plate. A process gas is supplied to a periphery of the first upper plate. The dielectric support positions the workpiece proximate and parallel to the first upper plate, such that the purge gas flows over a top surface of the workpiece so as to prevent the process gas from flowing over the top surface of the workpiece, and so as to cause the process gas to flow around a peripheral edge of the workpiece and below the workpiece. 本发明涉及用于原位晶片边缘和背侧等离子体清洁的系统和方法。具体而言，下电极板接收射频功率。第上板定位成平行于所述下电极板并