Epitaxial structure of ga-face group III nitride, active device, and method for fabricating the same

The present invention provides an epitaxial structure of Ga-face group III nitride, its active device, and the method for fabricating the same. The epitaxial structure of Ga-face AlGaN/GaN comprises a substrate, an i-GaN (C-doped) layer on the substrate, an i-Al(y)GaN buffer layer on the i-GaN (C-doped) layer, an i-GaN channel layer on the i-Al(y)GaN buffer layer, and an i-Al(x)GaN layer on the i-GaN channel layer, where x=0.1-0.3 and y=0.05-0.75. By using the p-GaN inverted trapezoidal gate or anode structure in device design, the 2DEG in the epitaxial structure of Ga-face group III nitride below the p-GaN inverted trapezoidal structure will be depleted, and thus fabricating p-GaN gate enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs), p-GaN anode AlGaN/GaN Schottky barrier diodes (SBDs), or hybrid devices. 本发明是关于种镓解理面III族/氮化物磊晶结构及其主动元件与其制作方法。在此镓解理面的氮化镓铝/氮化镓磊晶结构包含有基底；位于基底上的氮化镓碳参杂高阻值层；位于氮化镓碳参杂高阻值层上的氮化镓铝缓冲层；位于氮化镓铝缓冲层上的氮化镓通道层；以及位于氮化镓通道层上的氮化镓铝层。在元件设计上藉由P型氮化镓倒置梯型闸极或阳极结构使镓解理面III族/氮化物磊晶