Methods For Forming Semiconductor Device And Semiconductor Devices

The present invention relates to methods for forming a semiconductor device and semiconductor devices. The method for forming the semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, the semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material. 本公开涉及种用于形成半导体器件的方法和半导体器件。方法包括：形成被埋置在半导体衬底内的至少个激光标记，以及从半导体衬底的背侧对半导体衬底进行减薄。例如，半导体器件包括位于半导体封装件中的半导体衬底。激光标记被埋置在半导体衬底内。例如，另半导体器件包括半导体衬底。激光标记位于半导体衬底的背侧表面。此外，背侧表面的与激光标记相邻的至少部分不含重铸材料。