Gas-phase TMAH based silicon etching system
The invention discloses a gas-phase TMAH based silicon etching system. The gas-phase TMAH based silicon etching system comprises a control system, a conveying system, an etching system and a water-cooling system; the water-cooling system is used for condensing a TMAH gas; the etching system is used...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a gas-phase TMAH based silicon etching system. The gas-phase TMAH based silicon etching system comprises a control system, a conveying system, an etching system and a water-cooling system; the water-cooling system is used for condensing a TMAH gas; the etching system is used for generating the TMAH gas and conveying an etching gas to an etching cavity for etching a silicon wafer; the temperature used in the etching cavity is higher than the boiling point of the TMAH when the silicon wafer is etched, so that the silicon is etched by the TMAH in a gas state; and the structure of the non-etching surface of the silicon wafer is protected efficiently and compatibility between the silicon etching process and the finished processes is guaranteed. The conveying system is used for conveying and cleaning the etched silicon wafer; the control system is used for controlling coordination work of the water-cooling system, the etching system and the conveying system. Experimental study proves that a |
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