SCANNING PROBE MICROSCOPE AND METHOD FOR MEASURING LOCAL ELECTRICAL POTENTIAL FIELDS

The invention relates to a scanning probe microscope and a method for measuring local electrical potential fields. According to the invention, a scanning probe microscope is provided, on the tip of which a quantum dot is applied. This permits an increase in the resolution and sensitivity in the meas...

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Bibliographische Detailangaben
Hauptverfasser: WAGNER CHRISTIAN, TEMIROV RUSLAN, TAUTZ FRANK STEFAN, GREEN MATTHEW FELIX BLISHEN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to a scanning probe microscope and a method for measuring local electrical potential fields. According to the invention, a scanning probe microscope is provided, on the tip of which a quantum dot is applied. This permits an increase in the resolution and sensitivity in the measuring of electrical potential fields. In the method according to the invention the applied voltage is determined, wherein a charge change of the quantum dot occurs. According to the invention, the resolution is no longer dependent on the distance of the tip from the sample to be investigated, nor on the radius if the tip. 本发明涉及扫描探针显微镜以及用于测量局部电势场的方法。按照本发明提供扫描探针显微镜,量子点被安置在所述扫描探针显微镜的尖端处。这使得能够提高在测量电势场时的分辨率和灵敏度。在按照本发明的方法中确定所施加的电压,在所述电压的情况下发生量子点的电荷变化。按照本发明,分辨率不再与尖端距要研究的试样的间隔以及尖端的半径有关。