SPUTTERING APPARATUS AND SPUTTERING METHOD USING THE SAME

A sputtering apparatus includes a substrate holder, a first counterpart target area, a second counterpart target area, and a power supply. The first counterpart target area includes a first target and at least one first magnetic part and operates to form a magnetic field in a first plasma area adjacent to the first target. The second counterpart target area includes a second target and at least one second magnetic part and operates to form a magnetic field in a second plasma area adjacent to the second target. The power supply supplies a first power voltage to the first and second targets. A control anode faces the substrate holder in a second direction, with the first and second plasma areas therebetween, and receives a control voltage greater than the first power voltage. 本发明涉及种溅射装置及使用该溅射装置的溅射方法。溅射装置包括基板支架、第对置靶单元、第二对置靶单元和电源单元。第对置靶单元包括第靶和至少个第磁性部，并操作来在邻近第靶的第等离子体区域中形成磁场。第二对置靶单元包括第二靶和至少个第二磁性部，并操作来在邻近第二靶的第二等离子体区域中形成磁场。电源单元将第电力电压提供到第靶和第二靶。控制阳极在第二方向上面对基板支架，在第对置靶单元与第二对置靶单元之间具有第等离子体区域和第二等离子体区域，控制阳极接收大于第电力电压的控制电压。