Conductive polymer/si interfaces at back side of solar cells

The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises - a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and - a back side (2b), wherein the bac...

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Bibliographische Detailangaben
Hauptverfasser: ZIELKE DIMITRI, SCHMIDT JAN, LEVENICH WILFRIED, SCHEEL ARNULF, HERTEIS MATTHIAS, ELSCHNER ANDREAS
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The present invention relates to a solar cell (1) comprising a substrate (2) of p-type silicon or n-type silicon, wherein the substrate (2) comprises - a front side (2a) the surface of which is at least partially covered with at least one passivation layer (3) and - a back side (2b), wherein the back side (2b) of the substrate (2) is at least partially covered with a conductive polymer layer (4) and wherein at least one of the following conditions a) and b) is fulfilled: a) the conductive polymer layer (4) is at least partially in direct contact with the surface of the p-type or n-type silicon; b) the conductive polymer layer (4) comprises a cationic conductive polymer and a polymeric anion in a weight ratio cationic conductive polymer : polymeric anion of greater than 0.4. The present invention also relates to a process for the preparation of a solar cell, to a solar cell obtainable by this process and to a solar module. 本发明涉及太阳能电池(1),其包含p-型硅或n-型硅的基底(2),其中基底(2)包含:-正面(2a),其表面至少部分地被至少个钝化层(3)覆盖,和-背面(2b),其中基底(2)