Lateral high-voltage device

The invention provides a lateral high-voltage device. A first type doping strip and a second type doping strip that are overlapped in a Z direction form a lateral super-junction structure, thereby reducing the on resistance of the device and enhancing the voltage-withstanding capability. With introduction of dielectric grooves, the superficial area of the device is reduced effectively, the voltage withstanding is realized, the specific on resistance of the device is reduced, and the high voltage-withstanding performance is kept. Because a body field plate is arranged in the dielectric grooves, the electric field is modulated by the body field plate when the device is in an off state and consumption is assisted, so that the voltage withstanding is shared by the left side of the device; a charge is introduced when the device is in an on state to increase the carrier number in a drift region. The traditional groove gate structure is segmented and a gate is only arranged at the first type doping strip; the gate r