METHOD OF FORMING SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device includes forming a first film having a first film stress type and a first film stress intensity over a substrate and forming a second film having a second film stress type and a second film stress intensity over the first film. The second film stress type is different than the first film stress type. The second film stress intensity is about same as the first film stress intensity. The second film compensates stress induced effect of non-flatness of the substrate by the first film. 种形成半导体器件的方法，该方法包括在衬底上方形成具有第膜应力类型和第膜应力强度的第膜，和形成具有第二膜应力类型和第二膜应力强度且位于第膜上方的第二膜。第二膜应力类型不同于第膜应力类型。第二膜应力强度与第膜应力强度大致相同。第二膜补偿由第膜对衬底的非平坦性的应力引起的影响。