A method of depositing a conformal and low wet etch rate encapsulation layer using PECVD

The present invention provides a method of depositing a conformal and low wet etch rate encapsulation layer using PECVD, specifically providing a method of depositing a conformal, dense, silicon-containing film having a low hydrogen content. The method includes pulsing the plasma while exposing the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VAN SCHRAVENDIJK, BART J, WEI, JOSEPH HUNGI, MAO, YISHA, SINGHAL, AKHIL
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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