A method of depositing a conformal and low wet etch rate encapsulation layer using PECVD

The present invention provides a method of depositing a conformal and low wet etch rate encapsulation layer using PECVD, specifically providing a method of depositing a conformal, dense, silicon-containing film having a low hydrogen content. The method includes pulsing the plasma while exposing the substrate to a silicon-containing precursor and a reactant to promote a predominantly free radical-based pulsed plasma enhanced chemical vapor deposition method to deposit a conformal silicon-containing film. The method further includes periodically performing a post-processing operation whereby the deposited film is exposed to an inert plasma for every about 20 Angstroms to 50 Angstroms of film deposited using pulsed plasma PECVD to densify and reduce deposited Hydrogen content in the membrane. 本发明提供了使用PECVD沉积保形和低湿蚀刻速率的封装层的方法，具体提供了沉积具有低氢含量的保形、致密的含硅膜的方法。所述方法包括在将衬底暴露于含硅前体和反应物同时对等离子体施以脉冲，以促进主要基于自由基的脉冲等离子体增强化学气相沉积方法，以沉积保形含硅膜。所述方法还包括周期性地进行后处理操作，由此，对于使用脉冲等离子体PECVD沉积的每约20埃至50埃的膜，将沉积的膜暴露于惰性等离子体以致密化并降低沉积的膜中的氢含量。