Resistance random access memory based on lead halide

The present invention provides a resistance random access memory based on lead halide and a preparation method thereof. The specific structure of the memory is a sandwiched structure with the FTO, ITO, ZTO used as the substrate and bottom electrodes. The lead halide film serves as resistance layer; the Pt, Au, W serve as the top electrode. The invention adopts a new type of lead halide with resistance-changing function, which has the characteristics of simple composition, is easy to form a film and achieves stable chemical performance in the air. The resistance random access memory based on lead halide has the characteristics of high and low resistivity window, stable electrical performance, simple preparation process, low cost, safety and reliability, and poses no environmental pollution. Its storage window reaches the value 103 or more. With good cycle tolerance, it still has good resistance to change after repeated erases. The invention has good development potential and application value. 本发明提出了种基于卤化铅的阻变存