Method for epitaxial growth of light emitting diode

The invention provides a method for epitaxial growth of a light emitting diode, which comprises the following steps: providing a substrate; and growing an unintentionally doped GaN layer on the substrate in an epitaxial manner. The epitaxial growth of the unintentionally doped GaN layer lasts a plur...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHEN KAIXUAN, ZHUO XIANGJING, WANG YANG, JIANG WEI, LIN ZHIWEI, TONG JICHU, YAO GANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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