Method for epitaxial growth of light emitting diode

The invention provides a method for epitaxial growth of a light emitting diode, which comprises the following steps: providing a substrate; and growing an unintentionally doped GaN layer on the substrate in an epitaxial manner. The epitaxial growth of the unintentionally doped GaN layer lasts a plurality of growth cycles. Each growth cycle consists of a first growth stage and a second growth stage. In the first growth stage, the flow of a gallium precursor source is a first flow. In the second growth stage, the flow of the gallium precursor source is a second flow. The first flow is greater than the second flow. Through high-low alternating change of the flow of the gallium precursor source, the GaN layer is grown in a high rate and low rate alternating mode. Therefore, the growth rate of the light emitting diode is improved, and at the same time, the quality of epitaxial gallium nitride crystals is not deteriorated. 本申请提供了种发光二极管的外延生长方法，其包括：提供衬底；在所述衬底上外延生长非故意掺杂GaN层；其中，所述非故意掺杂GaN层外延生长若干个生长周期，每个生长周期包括：第生长阶段和第二生