Transistors and methods for making them

A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 107 cm2/Vs and more preferab...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BROWN BEVERLEY ANNE, OGIER SIMON DOMINIC, PALUMBO MARCO, MCCALL KERI LAURA
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor composition which comprises a soluble polyacene semiconductor and a polymeric semiconducting binder the binder having a permittivity greater than 3.4 at 000 Hz. The charge mobility of the semiconducting binder when measured in a pure state is greater than 107 cm2/Vs and more preferably greater than 106 cm2/Vs. a main component comprising a perovskite type compound shown by a compositional formula (Ba1-x-ySrxCay)m(Ti1-zZrz)O3, a first sub component comprising oxides of a rare earth element, a second sub component as a sintering agent, wherein said dielectric ceramic composition is a complete solid solution particle wherein the rare earth element is solid dissolved to entire dielectric particle, or a core-shell particle having high ratio of the diffusion phase, and comprises the dielectric particle having 5 to 20 atom % of the average concentration of the rare earth element in the diffusion phase, and having uniform concentration distribution of the rare earth element in the diffusion phase. 本申请