Manufacturing method for device with large photostrictive effect

The invention proposes a manufacturing method for a device with a large photostrictive effect, and the method comprises the following steps: (1), selecting a single crystal with orientation as a conductive substrate; (2), growing a piezoelectric film with the thickness from 400nm to 600nm on the substrate through a pulse laser deposition method (or other methods which can achieve the epitaxial growth, such as MBE (molecular beam epitaxy)); (3), growing a conductive film on the piezoelectric film through the pulse laser deposition method (or other methods which can achieve the epitaxial growth, such as MBE (molecular beam epitaxy)), and then growing an insulating layer; and growing a ferroelectric photovoltaic layer with the thickness from 400nm to 600nm and an electrode on the insulating layer. The method can be used for manufacturing an optical driver prototype device with the big photoinduced deformation through mastering the light drive multi-dimensional regulation and control method of a ferroelectric mul