Semiconductor device and preparation method therefor

The invention discloses a semiconductor device and a preparation method therefor, and the device comprises a substrate, a bottom electrode, a ternary oxide film and a top electrode, wherein the substrate, the bottom electrode, the ternary oxide film and the top electrode are sequentially arranged from the bottom to the top. According to the invention, a strontium titanate material (ternary oxide AO(ABO3)n) is used in the structure of the device. The testing of the semiconductor device indicates that the internal current of the semiconductor in the structure increases to an extreme value at first and then abruptly decreases and finally remains in a steady state with the increasing of a voltage applied to two ends, thereby presenting an apparent negative differential resistance characteristic. The device in the above structure is simple in structure, can achieve the high-degree integration of an electronic device, and is higher in stability. 本申请公开了种半导体器件及其制备方法，其中，所述半导体器件包括由下至上依次排列的衬底、底电极、三元氧化物薄膜和顶电极。所述半导体器件将钛酸锶