Method for lowering silicon damage in silicon oxide wet etching

The invention provides a method for lowering silicon damage in silicon oxide wet etching. The method comprises the following steps of pumping excessive nitrogen into a hydrofluoric acid solution to separate out oxygen from the solution so as to lower oxygen content; immersing a silicon wafer into the hydrofluoric acid solution to be cleaned, and then taking out; and performing water washing and drying on the silicon wafer. By virtue of the method for lowering silicon damage in silicon oxide wet etching provided by the invention, the problem of the concave pit defect caused by dissolved oxygen in the silicon wafer cleaning process by hydrofluoric acid can be effectively solved. 本发明提出种在氧化硅湿法刻蚀中降低硅损伤的方法，包括下列步骤：将过量氮气通入氢氟酸溶液中，使得其中的氧气析出，从而降低氧含量；将硅片浸入所述氢氟酸溶液中进行清洗处理后取出；将所述硅片进行水洗干燥处理。本发明提出的在氧化硅湿法刻蚀中降低硅损伤的方法，能够有效解决氢氟酸清洗硅片过程中因溶解氧引起的凹坑缺陷问题。