STATIC RANDOM ACCESS MEMORY

A static random access memory (SRAM) cell includes first through fourth source diffusion regions sequentially arranged in a first direction, a first pass-gate transistor, a source region of which is formed by the first source diffusion region, first and second pull-up transistors, source regions of which are formed by the second source diffusion region, first and second pull-down transistors, source regions of which are formed by the third source diffusion region, a second pass-gate transistor, a source region of which is formed by the fourth source diffusion region, and an intermediate region between the first and second pass-gate transistors linearly extending along a direction parallel to the first direction and across the entire SRAM cell. Each of the first source diffusion region and the fourth source diffusion region is spaced-apart from the intermediate region. 种静态随机存取记忆体储存单元，包括依序排列在第方向的第源极扩散区域到第四源极扩散区域、第通闸晶体管其源极区域由第源极扩散区域形成、第上拉晶体管及第二上拉晶体管其源极区域由第二源极扩散区域形成、第下拉晶体管及第二下拉晶体管其源极区域由第三源极扩散区域形成、第二通闸晶体管其源极区域由第四源