Method for Lithography Patterning

The embodiment of the invention discloses a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL. 本发明的实施例公开了用于光刻图案化的方法。该方法包括提供衬底，在衬底上方形成沉积增强层(DEL)并且使有机气体在DEL的表面附近流动。在有机气体的流动期间，该方法还包括用图案化的辐射辐照DEL和有机气体。有机气体的元素通过图案化的辐射而聚合，从而在DEL上方形成光刻胶图案。该方法还包括用光刻胶图案作为蚀刻掩模蚀刻DEL，从而形成图案化的DEL。