Substrate processing apparatus
The invention provides a substrate processing apparatus which can restrain blackness of a nozzle and improve uniformity between membranous surfaces. The apparatue includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a substrate processing apparatus which can restrain blackness of a nozzle and improve uniformity between membranous surfaces. The apparatue includes: a process chamber accommodating substrates; a heating system for heating the process chamber to a predetermined temperature; a precursor gas supply system including a precursor gas nozzle and for supplying a precursor gas from the precursor gas nozzle to the process chamber; a reaction gas supply system configured to supply a reaction gas reacting with the precursor gas in the process chamber; and a control part configured to control the heating system, the precursor gas supply system and the reaction gas supply system to form a film on each of the plurality of substrates by performing a process; wherein the precursor gas nozzle extends upwards in a substrate carry direction and comprises a plurality of supply holes and a plurality of pressure reduction holes, the plurality of supply holes open openings on the height corresponding to a car |
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