Corrosion resistant abatement system

Embodiments disclosed herein include a plasma source, and an abatement system for abating compounds produced in semiconductor processes. In one embodiment, a plasma source is disclosed. The plasma source includes a body having an inlet and an outlet, and the inlet and the outlet are fluidly coupled within the body. The body further includes inside surfaces, and the inside surfaces are coated with yttrium oxide or diamond-like carbon. The plasma source further includes a flow splitter disposed in the body in a position that formed two flow paths between the inlet and the outlet, and a plasma generator disposed in a position operable to form a plasma within the body between the flow splitter and inside surfaces of the body. 本文披露的实施方式包括等离子体源以及用于减少半导体处理中产生的化合物的减量系统。在个实施方式中，披露种等离子体源。等离子体源包括具有入口和出口的主体，并且所述入口和所述出口流体耦接于所述主体内。所述主体进步包括内表面，并且所述内表面以氧化钇或类金刚石碳涂覆。等离子体源进步包括分流器和等离子体产生器，所述分流器设置于主体中的位置，使得在入口与出口之间形成两个流动路径，等离子体产生器设置于位置，从而可操作性地于分流器与主体的内表面之间的主体内形成等离子体。