Wide dynamic range CMOS image sensor pixel unit circuit
The invention discloses a wide dynamic range CMOS image sensor pixel unit circuit. The pixel unit circuit comprises a pixel integral circuit and an integral time control circuit; the pixel integral circuit comprises a photodiode diode, an integral signal control transistor M1, a reset signal control...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a wide dynamic range CMOS image sensor pixel unit circuit. The pixel unit circuit comprises a pixel integral circuit and an integral time control circuit; the pixel integral circuit comprises a photodiode diode, an integral signal control transistor M1, a reset signal control transistor M2, a source follower transistor M5, a column selection transistor M8 and an integral capacitor Cint, wherein the integral time control circuit comprises a voltage comparator CAMP, a coarse positioning time-voltage coded signal generator, a precise positioning time-voltage coded signal generator, a coarse positioning time-voltage coded pulse read-in circuit, and a precise positioning time-voltage coded pulse read-in circuit. The pixel unit circuit structure disclosed by the invention has an exposure time self-adaptive characteristics, the dynamic range of the CMOS image sensor can be effectively broadened, the problems that the travelling picture is glare, dazzling and unclear since the fixed exposure t |
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