Scattering parameter test circuit and method suitable for long delay device

The invention discloses a scattering parameter test circuit and method suitable for a long delay device, and belongs to the technical field of microwave test. The test circuit and method can realize accurate test of delay characteristics of the long delay device under any test scanning and analysis...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GUO MIN, WANG ZUNFENG
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The invention discloses a scattering parameter test circuit and method suitable for a long delay device, and belongs to the technical field of microwave test. The test circuit and method can realize accurate test of delay characteristics of the long delay device under any test scanning and analysis condition no longer through an approximate test method attached by limitation conditions, for different actual test application requirements, can realize accurate test without pre-knowing magnitude range of inherent delay characteristics of the long delay device, solve the problem of accurate test and evaluation of the delay characteristics of the long delay device effectively, and maximally meet the actual application test requirements and higher technical requirements in a general manner. 本发明公开了种适用于长延时器件的散射参数测试电路及方法,属于微波测试技术领域。本发明不再通过附带限定条件的近似测试方法,而实现长延时器件在任意测试扫描及分析条件下的时延特性的精确测试,可以针对不同的实际测试应用需求,无需事先预知长延时器件固有时延特性的量级范围,有效解决了长延时器件的时延特性的精确测试与评估问题,以通用化的方式最大限度地满足实际应用的测试需求以及更高的技术要求。