Semiconductor chip having weldable front surface, and method for manufacturing same
A semiconductor chip includes a semiconductor device having a first main extension direction and a second main extension direction; the first main extension direction and the second main extension direction form a main extension plane which is perpendicular to the stacking direction of the semicondu...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | A semiconductor chip includes a semiconductor device having a first main extension direction and a second main extension direction; the first main extension direction and the second main extension direction form a main extension plane which is perpendicular to the stacking direction of the semiconductor; a first weldable metal zone, a second weldable metal zone and a dielectric zone are directly arranged on the semiconductor device, wherein the first metal zone and the second metal zone are separated by the dielectric zone, a first distance is formed between the second metal zone and the first metal zone in the first main extension direction, a first welding flux having a fourth layer thickness at least equal to triple the first distance is arranged on the first metal zone in a non-welding state, a third metal zone is arranged on the first welding flux, a distance between the third metal zone and the semiconductor device in the first main extension direction is equal to a third distance at least 5 times the f |
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