Chemical mechanical polishing conditioner and fabrication method thereof

A chemical mechanical polishing conditioner comprises a substrate and at least one abrasive unit. The abrasive unit is provided on the substrate, and the abrasive unit comprises a supporting layer, an abrasive layer and a stress-relief layer. The supporting layer is provided with a working face far...

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Bibliographische Detailangaben
Hauptverfasser: LIAO WENREN, ZHOU RUILIN, CHEN YUTAI, QIU JIAFENG, SU XUESHEN
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A chemical mechanical polishing conditioner comprises a substrate and at least one abrasive unit. The abrasive unit is provided on the substrate, and the abrasive unit comprises a supporting layer, an abrasive layer and a stress-relief layer. The supporting layer is provided with a working face far away from the substrate and a non-working face opposite to the working face. The abrasive layer is provided on the working face of the supporting layer, and the abrasive layer is a first diamond-plated film formed by chemical vapor deposition method. The first diamond-plated film is provided with a plurality of abrasive tips. The stress-relief layer is provided on the non-working face of the supporting layer, and the stress-relief layer is a second diamond-plated film formed by chemical vapor deposition method. A thermal stress-relieving effect may be exerted by the stress-relief layer, so as to reduce warpage or deformation of the supporting layer. 种化学机械研磨修整器及其制造方法,该化学机械研磨修整器包括基板以及至少研磨单元,该研磨单元设置于该基板上,该研磨单元分别包括支撑层、