THERMOELECTRIC STRUCTURE, THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME

A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer. 公开热电结构体、热电器件和其制造方法。可包括在热电器件中的热电结构体可包括薄膜结构体，所述薄膜结构体可包含多个薄膜层。所述薄膜结构体可包括碲。所述薄膜结构体可在基底上。所述基底可包括氧化物，且缓冲层可在所述基底和所述薄膜结构体之间。所述热电结构体可经由将从靶烧蚀的材料沉积到所述基底上而制造。些材料可与所述基底反应以形成所述缓冲层，和薄膜层可形成于所述缓冲层上。可将所述薄膜层从所述基底除去并且提供在单独的基底上。将所述薄