SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

A manufacturing method of a semiconductor device forms grooves on a surface side of a semiconductor substrate and thereafter performs grinding from a back side of the semiconductor substrate until a ground face reaches the grooves. Thereafter, a back electrode is formed on the back of the semiconduc...

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1. Verfasser: KITAYAMA JUNICHI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:A manufacturing method of a semiconductor device forms grooves on a surface side of a semiconductor substrate and thereafter performs grinding from a back side of the semiconductor substrate until a ground face reaches the grooves. Thereafter, a back electrode is formed on the back of the semiconductor substrate that is separated by the grinding. 本文公开了种半导体装置及其制造方法。半导体装置的制造方法在半导体衬底的表面侧上形成槽,并且在此之后从半导体衬底的背部侧执行研磨,直到研磨面到达槽。在此之后,在通过研磨被分离的半导体衬底的背部上形成背部电极。