Lateral high-voltage device with semi-thin silicon layer structure
The invention provides a lateral high-voltage device with a semi-thin silicon layer structure. A cell structure of the lateral high-voltage device comprises a substrate, a buried oxide layer, ultrathin top layer silicon, a thick silicon-on-insulator (SOI) layer, a thick dielectric layer, a P-type bo...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a lateral high-voltage device with a semi-thin silicon layer structure. A cell structure of the lateral high-voltage device comprises a substrate, a buried oxide layer, ultrathin top layer silicon, a thick silicon-on-insulator (SOI) layer, a thick dielectric layer, a P-type body region, a P-type heavy-doping body contact region, an N-type heavy-doping source region, an N-type heavy-doping drain region, a gate oxide layer, a source contact electrode, a poly-silicon gate, a drain contact electrode and a substrate contact electrode. A part of ultrathin top layer silicon is used for improving longitudinal voltage resistance of the device, the thick SOI layer is used for providing a wider current conduction path for an on-state current, so that the specific on resistance of the device is reduced; a lateral linear variable doping technology is employed, and electric field distribution on a respective surface is modulated; and meanwhile, extra charge is generated to eliminate a substrate auxil |
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