Semiconductor device and method for manufacturing the same

A semiconductor device and a method for manufacturing semiconductor device are disclosed. The method includes the steps of: providing a substrate; forming a first fin-shaped structure and a second fin-shaped structure on the substrate; forming a first epitaxial layer on the first fin-shaped structure and a second epitaxial layer on the second fin-shaped structure; and forming a cap layer on the first epitaxial layer and the second epitaxial layer. Preferably, a distance between the first epitaxial layer and the second epitaxial layer is between twice the thickness of the cap layer and four times the thickness of the cap layer. 本发明公开种半导体元件及其制作方法。首先提供基底，然后形成第鳍状结构以及第二鳍状结构于基底上，形成第外延层于第鳍状结构上以及第二外延层于第二鳍状结构上，接着形成遮盖层于第外延层及第二外延层上，其中第外延层及第二外延层之间的距离介于遮盖层厚度的二倍至遮盖层厚度的四倍。