Systems and methods for eliminating flourine residue using a plasma-based process
The invention relates to systems and methods for eliminating flourine residue using a plasma-based process. A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | chi ; eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to systems and methods for eliminating flourine residue using a plasma-based process. A method for operating a substrate processing chamber includes after performing a process using a fluorine-based gas in the substrate processing chamber: a) during a first predetermined period, supplying a gas mixture to the substrate processing chamber including one or more gases selected from a group consisting of molecular oxygen, molecular nitrogen, nitric oxide and nitrous oxide and supplying RF power to strike plasma in the substrate processing chamber; b) during a second predetermined period after the first predetermined period, supplying molecular hydrogen gas and RF power to the substrate processing chamber; c) repeating a) and b) one or more times; d) purging the substrate processing chamber with molecular nitrogen gas; e) increasing chamber pressure; f) evacuating the substrate processing chamber; and g) repeating d), e) and f) one or more times.
本发明涉及使用基于等离子体的工艺消除氟残余物的系统和方法。种用于操作衬底处理室的方法,包括在 |
---|