Gallium-nitride-based inverter chip and forming method therefor

The invention discloses a gallium-nitride-based inverter chip and a forming method therefor, and the chip comprises a substrate; a gallium nitride channel layer located on the substrate; a barrier layer located on the gallium nitride channel layer; a P-type III-family metal nitride layer located on the surface of the barrier layer; a first electrode located on the surface of the P-type III-family metal nitride layer; a second electrode, a third electrode and a fourth electrode, which are all located on the surface of the barrier layer. The chip is good in transmission performance, and is strong in loading capability. 种氮化镓基反相器芯片及其形成方法，所述氮化镓基反相器芯片包括：衬底；位于所述衬底上的氮化镓沟道层；位于所述氮化镓沟道层上的势垒层；位于部分势垒层表面的P型III族金属氮化物层；位于所述P型III族金属氮化物层表面的第电极；位于所述势垒层表面第二电极、第三电极和第四电极。所述氮化镓基反相器芯片具有良好的传输性和强的带负载能力。