Multi-gate tunnel field-effect transistor (TFET)

A Tunnel Field-Effect Transistor (TFET) is provided comprising a source-channel-drain structure of a semiconducting material. The source-channel-drain structure comprises a source region being n-type or p-type doped, a drain region oppositely doped than the source region and an intrinsic or lowly doped channel region situated between the source region and the drain region. The TFET further comprises a reference gate structure covering the channel region and a source-side gate structure aside of the reference gate structure wherein the work function and/or electrostatic potential of the source-side gate structure and the reference work function and/or electrostatic potential of the reference gate structure are selected for allowing the tunneling mechanism of the TFET device in operation to occur at the interface or interface region between the source-side gate structure and the reference gate structure in the channel region. 公开了种隧道场效应晶体管(TFET)，其包括半导体材料的源极-沟道-漏极结构。该源极-沟道-漏极结构包括n型或p型掺杂的源极区，与该源极区相反掺杂的漏极区和位于该源极区和该