High-power semiconductor laser packaging structure capable of realizing stable wavelength

The invention proposes a high-power semiconductor laser packaging structure capable of realizing stable wavelength, so that a high-power semiconductor laser can work in a full temperature range. The high-power semiconductor laser packaging structure includes a laser chip, a heating device, a heat conduction substrate and a second heat conduction substrate, the first heat conduction substrate and the second heat conduction substrate are bonded to the N face and the P face of the laser chip, and electrical connection is formed on the bonding surfaces. A heating device adopts a plane heating element generated through a thin film process or a thick film process, is located on the outer side surface of one of the heat conduction substrates and maintains insulated from the heat conduction substrate. 本发明提出种可实现波长稳定的高功率半导体激光器封装结构，使其可以在全温度范围下工作。该高功率半导体激光器封装结构包括激光芯片、加热装置、第导热衬底和第二导热衬底，分别与激光芯片的N面和P面键合，并在键合面形成电连接；所述加热装置采用通过薄膜工艺或厚膜工艺生成的平面加热元件，位于其中个导热衬底的外侧表面并与该导热衬底保持绝缘。