Semiconductor device, manufacturing method thereof and electronic device

The invention provides a semiconductor device, a manufacturing method thereof and an electronic device. The method comprises steps: a semiconductor substrate is provided; a gate structure is formed on the semiconductor substrate, and source/drain areas which are not activated are formed in the semiconductor substrate at two sides of the gate structure; a stress material layer is formed on the semiconductor substrate to cover the gate structure; an annealing process is executed to activate dopants in the source/drain areas and transfer of the stress in the stress material layer is completed; and the stress material layer is removed, and ion implantation is executed to compensate losses of the dopants in the source/drain areas caused by the annealing process. Thus, LOD increasing effects caused as the feature size of the device is reduced can be effectively improved, and the device performance is enhanced. 本发明提供种半导体器件及其制造方法、电子装置，所述方法包括：提供半导体衬底，在半导体衬底上形成有栅极结构，在栅极结构两侧的半导体衬底中形成有未激活的源/漏区；在半导体衬底上形成应力材料层，以覆盖栅极结构；实施退火