SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a gate structure, a dielectric layer, an etch stop layer, and an adhesion layer. The gate structure is formed over the substrate. The dielectric layer is formed aside the gate structure. The adhesion layer overlays a top surface of the gate structure and extends to a first top surface of the dielectric layer. The etch stop layer is over the adhesion layer and in contact with a second top surface of the dielectric layer. According to the invention, the embodiments also relate to a semiconductor device and a manufacturing method thereof. 本发明提供了种半导体器件，该半导体器件包括衬底、栅极结构、介电层、蚀刻停止层和粘合层。栅极结构形成在衬底上方。介电层形成在栅极结构旁边。粘合层覆盖栅极结构的顶面且延伸至介电层的第顶面。蚀刻停止层在粘合层上方且与介电层的第二顶面接触。本发明实施例涉及半导体器件及其制造方法。