Thin film transistor, fabrication method thereof, array substrate and electronic equipment

The invention provides a thin film transistor, a fabrication method thereof, an array substrate and electronic equipment. The thin film transistor comprises a gate, a gate insulation layer, an active layer and a source-drain electrode, wherein a protection structure is arranged on a surface, near to the gate, of the source-drain electrode. The inventor finds out that the protection structure is arranged on the surface, near to the gate, of the source-drain electrode, the damage to the active layer during the etching process can be prevented, a channel region of the active layer cannot be corroded, so that the application performance of the thin film transistor can be greatly improved. 本发明提供了薄膜晶体管及其制备方法、阵列基板及电子设备，该薄膜晶体管包括：栅极；栅绝缘层；有源层；源漏电极，其中，在所述源漏电极靠近所述栅极的表面设置有保护结构。发明人发现，通过在源漏电极靠近所述栅极的表面设置保护结构，可以避免在刻蚀过程对有源层的损伤，不会对有源层的沟道区发生侵蚀，从而可以大大提升薄膜晶体管的使用性能。