Plasma jet device

The invention discloses a plasma jet device comprising a shell which is provided with a first inlet and a first outlet. Multiple discharge units are distributed in the shell. The first inlet is used for providing reaction gas to the discharge units. The discharge units are used for performing discharge processing on the reaction gas so as to form plasma jet. The first outlet is used for outputting the plasma jet. According to the plasma jet device, the formed plasmas form a large area of uniform and stable plasma jet through the effect of gas flow, the array plasma jet directly affects a substrate to perform etching on a thin film transistor, and finally the thin film transistor plasma etching technology in which a discharge area and a working area are separated can be realized. The technical scheme has the advantages of being high in plasma particle activity and fast in processing speed so as to realize multi-angle and large area of uniform and stable low temperature thin film transistor surface etching. 本发明