System and method for achieving gate driving circuit

The invention relates to a system and method for achieving gate driving circuit, and provides a system for achieving the gate driving circuit. The system comprises a drive chip, a high side control circuit, a high side drive tube, a first P-channel metal oxide semi-conductor PMOS switch and a second...

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Bibliographische Detailangaben
Hauptverfasser: FANG LIEYI, XIA ZHENGLAN, ZHAO SHIFENG, YAO CHAO, ZHANG YUNCHAO
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:The invention relates to a system and method for achieving gate driving circuit, and provides a system for achieving the gate driving circuit. The system comprises a drive chip, a high side control circuit, a high side drive tube, a first P-channel metal oxide semi-conductor PMOS switch and a second PMOS switch and a high side delay component. The input of the high side delay component receives the gate voltage detection signals, and the output end is connected with the first PMOS switch in a parallel mode. The system comprises a low side control circuit. The low side control circuit comprises a first low side drive tube and a second low side drive tube which are parallelly connected, wherein the drive capacity of the first low side drive tube is higher than the drive capacity of the second drive tube. The system comprises a low side delay component and a MOS power stage. The MOS power stage comprises a power transistor, and the gate of the power transistor is respectively connected with the high side control