SOI lateral high voltage device and manufacturing method thereof

The invention provides an SOI lateral high voltage device and a manufacturing method thereof. The manufacturing method comprises the following steps: by taking an SOI (silicon on insulator) as a substrate, forming an N type linear varied doped SOI layer and a thin silicon layer drift region, forming a thin silicon layer, namely a thick medium layer, and forming a Pwell region; forming an Nwell region, forming a gate oxidation layer, forming a polycrystalline silicon gate electrode, forming an N strip, forming a P strip, carrying out injection on a first P type heavily doped region, a first N type heavily doped region and a second N type heavily doped region, forming ohmic contact, leading out a contact hole of a first layer of an electrode, etching, depositing aluminum metal, and forming a source contact electrode and a drain contact electrode. The manufacturing method provided by the invention is good in compatibility with the traditional technology and has universality, and device area and device cost of a