Laminated substrate for epitaxial growth of nitride and forming method thereof

The invention provides a laminated substrate for epitaxial growth of nitride and a forming method thereof. The laminated substrate comprises at least one set of laminating structure, the laminating structure comprises a chromium nitride layer and an aluminum nitride layer, and the chromium nitride layer and the aluminum nitride layer are mutually laminated; the laminated substrate has a hexagonal crystal structure. The laminated substrate is suitable for being adopted as a substrate as a high-temperature growth nitride epitaxial layer to form a nitride epitaxial layer with high quality. 种用于氮化物外延生长的叠层基板及其形成方法，所述叠层基板包括：至少组堆叠结构，所述堆叠结构包括氮化铪层和氮化铝层，所述氮化铪层和氮化铝层相互堆叠；所述叠层基板具有六方晶体结构。所述叠层基板适于作为高温生长氮化物外延层的基底，形成高质量的氮化物外延层。