SEMICONDUCTOR DEVICE

A semiconductor device includes an active pattern having sidewalls defined by a device isolation pattern disposed on a substrate and an upper portion protruding from a top surface of the device isolation pattern, a liner insulating layer on the sidewalls of the active pattern, a gate structure on th...

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Bibliographische Detailangaben
Hauptverfasser: KIM, HYUNJI, PARK, GIGWAN, PARK, SANGDUK, SHIN, KEO MYOUNG, LEE, YONGSEOK, LEE, JEONGYUN
Format: Patent
Sprache:chi ; eng
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Beschreibung
Zusammenfassung:A semiconductor device includes an active pattern having sidewalls defined by a device isolation pattern disposed on a substrate and an upper portion protruding from a top surface of the device isolation pattern, a liner insulating layer on the sidewalls of the active pattern, a gate structure on the active pattern, and source/drain regions at both sides of the gate structure. The liner insulating layer includes a first liner insulating layer and a second liner insulating layer having a top surface higher than a top surface of the first liner insulating layer. Each of the source/drain regions includes a first portion defined by the second liner insulating layer, and a second portion protruding upward from the second liner insulating layer and covering the top surface of the first liner insulating layer. 公开种半导体装置,所述半导体装置包括:具有侧壁的有源图案,由设置在基底上的器件隔离图案限定,并具有从器件隔离图案的顶表面突出的上部;衬里绝缘层,位于有源图案的侧壁上;栅极结构,位于有源图案上;以及源/漏区,位于栅极结构的两侧处。衬里绝缘层包括第衬里绝缘层和具有比第衬里绝缘层的顶表面高的顶表面的第二衬里绝缘层。每个源/漏区包括由第二衬里绝缘层限定并覆盖第衬里绝缘层的顶表面的第部分和从第二衬里绝缘层向上突出的第二部分。